Japanese Journal of Applied Physics · 1997 · 16 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsIii-v SemiconductorsLaser DiodesSemiconductor Device MaterialsSemiconductor LasersSemiconductor PhysicsBand GapBand Gap EnergyBand Gap EngineeringBandgap EngineeringMolecular Beam EpitaxySemiconductor Laser DiodesTernary CompoundsWide-bandgap Materials Growth
TlGaP layers are grown on GaAs substrates by gas source molecular beam epitaxy. TlGaP is a constituent ternary alloy of the new III–V compound semiconductor TlInGaP, a material which can be used for 0.9 µ m to over 10 µ m laser diodes and for temperature-insensitive-wavelength laser diodes. TlGaP on GaAs shows phase separation into three stable compositions: TlGaP nearly lattice-matched to GaAs, GaP-like TlGaP and TlP-like TlGaP. By adjusting Tl and Ga fluxes, TlGaP layers without phase separation are grown. Photoconductance measurement on TlGaP shows absorption in the 1.3 µ m wavelength region as well as the small temperature variation of band-gap energy, as expected.
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