Pattern generation on semiconductor surfaces by a scanning tunneling microscope operating in air

Abstract

Recent results employing scanning tunneling microscope-based techniques for the generation of nanometer-scale patterns on passivated semiconductor surfaces are presented. Preparation and characterization of hydrogen-passivated silicon and sulfur-passivated gallium arsenide surfaces are described and the determination of the chemical and morphological properties of the patterned regions by scanning electron microscopy and time-of-flight secondary ion mass spectrometry are discussed. Our recent demonstration that ultrashallow, oxide features written by scanning tunneling microscope (STM) can serve as an effective mask for selective-area GaAs heteroepitaxy on silicon is used to illustrate key requirements necessary for the realization of a unique, STM-based nanotechnology.