MBE of Pb1−xEuxSe for the use in IR devices

Effect of Pb- and Te-saturation on carrier concentrations in impurity-doped PbTe

A. J. Strauss · Journal of Electronic Materials · 1973 · 106 citations

Natural Sciences, Materials Science, Condensed Matter Physics +13

Lead-europium-selenide-telluride grown by molecular beam epitaxy

D. L. Partin · Journal of Electronic Materials · 1984 · 60 citations

Natural Sciences, Materials Engineering, Materials Science +7

Calculation of the refractive indexes of lead chalcogenide salts and its application for injection lasers

Y. Shani, R. Rosman, Abraham Katzir · IEEE Journal of Quantum Electronics · 1985 · 26 citations

Natural Sciences, Materials Science, Physics +17

Quantum well diode lasers of lead-europium-selenide-telluride

D. L. Partin, R. F. Majkowski, D. E. Swets · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 23 citations

Engineering, Materials Engineering, Materials Science +17

77 K cw operation of distributed Bragg reflector Pb1−<i>x</i>Sn<i>x</i>Se/ Pb1−<i>x</i>−<i>y</i>Eu<i>y</i>Sn<i>x</i>Se diode lasers

Y. Shani, Abraham Katzir, K. H. Bachem et al. · Applied Physics Letters · 1986 · 21 citations

Engineering, Materials Engineering, Materials Science +16