Applied Physics Letters · 1986 · 21 citations · 6 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsSemiconductor HeterostructuresSemiconductor LasersDistributed Bragg Reflector LasersHeterostructure LasersMolecular Beam EpitaxySemiconductor Laser DiodesSemiconductor Laser FabricationSingle-mode OperationSingle-mode Semiconductor LasersTuning
Distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe double heterostructure stripe geometry diode lasers were fabricated using molecular beam epitaxy. We observed cw single mode operation between the heat-sink temperatures 66 and 81 K at λ≊7.8 μm with an average tuning rate of 0.8 cm−1/K. Single mode continuous tuning over a relatively wide range of 6 cm−1, with an average tuning rate of 0.026 cm−1/mA, was obtained at 77 K.
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cw operation of distributed feedback Pb1−<i>x</i>Sn<i>x</i>Te lasers
J. N. Walpole, A. R. Calawa, S. R. Chinn et al. · Applied Physics Letters · 1977 · 22 citations