Applied Physics Letters · 1977 · 22 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsSemiconductor Crystal GrowthSemiconductor HeterostructuresSemiconductor LasersDistributed Feedback LasersDouble HeterostructuresHeterostructure LasersMolecular Beam EpitaxySemiconductor Laser DiodesSingle-mode OperationSingle-mode Semiconductor Lasers
Distributed feedback Pb1−xSnxTe double-heterostructure lasers grown by molecular-beam epitaxy with cw operation up to 50 K are reported. The grating of 1.1-μm periodicity operates in the first Bragg order near 800 cm−1 (12.5 μm). Single-mode operation is obtained over a wide range of diode current and heat-sink temperature. Continuous current tuning of mode frequency up to 7 cm−1 is obtained, and by varying both diode current and heat-sink temperature complete coverage of the range 795–806.5 cm−1 is demonstrated.
7