Double-heterostructure PbSnTe lasers grown by molecular-beam epitaxy with cw operation up to 114 K

Abstract

Double-heterostructure Pb1−xSnxTe lasers with active regions of Pb0.782Sn0.218Te have been grown by molecular-beam epitaxy which operate cw up to heat-sink temperatures of 114 K. Temperature tuning of the emission from 15.9 to 8.54 μm wavelength is obtained, with emission at 77 K near 11.5 μm. The current-voltage characteristics show an abrupt change in slope at threshold, indicating high incremental internal quantum efficiency.