Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth

The role of impurities in refined ZnSe and other II–VI semiconductors

R. N. Bhargava · Journal of Crystal Growth · 1982 · 189 citations

Engineering, Materials Engineering, Materials Science +14

Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy

Kazuhiro Ohkawa, Tsuneo Mitsuyu, Osamu Yamazaki · Journal of Applied Physics · 1987 · 177 citations

Natural Sciences, Materials Science, Physics +17

Growth and doping of ZnSe and ZnSxSe1-x by organometallic chemical vapor deposition

W. Stutius · Journal of Crystal Growth · 1982 · 156 citations

Engineering, Materials Engineering, Materials Science +11

Blue light emission from ZnSe <i>p</i>-<i>n</i> junctions

Jun‐ichi Nishizawa, Kazuomi Itoh, Yasuo Okuno et al. · Journal of Applied Physics · 1985 · 120 citations

Engineering, Materials Engineering, Materials Science +16

Growth of <i>p</i>-type ZnSe:Li by molecular beam epitaxy

Hai‐Ping Cheng, J. M. DePuydt, J. E. Potts et al. · Applied Physics Letters · 1988 · 109 citations

Engineering, Materials Engineering, Materials Science +17