Photoluminescence study and parameter evaluation in InAs quantum dot-in-a-well structures

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

Natural Sciences, Materials Science, Physics +16

Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In _0.15 Ga _0.85 As quantum well

G.T. Liu, A. Stintz, H. Li et al. · Electronics Letters · 1999 · 480 citations

Engineering, Electrical Engineering, Materials Science +16

Characterization of InAs quantum dots in strained InxGa1−xAs quantum wells

A. Stintz, G. T. Liu, A.L. Gray et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 132 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders

Leah Bergman, Xiang‐Bai Chen, John L. Morrison et al. · Journal of Applied Physics · 2004 · 132 citations

Natural Sciences, Materials Science, Physics +17

Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers

Petr G. Eliseev, H. Li, T. Liu et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2001 · 108 citations

Engineering, Electrical Engineering, Physics +17