Journal of Applied Physics · 2004 · 132 citations · 39 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsOptical MaterialsSemiconductor MaterialsLuminescent MaterialsOptical Properties Of SolidsSemiconductor Device MaterialsSemiconductor NanomaterialsThermal Properties Of SemiconductorsWide Band Gap SemiconductorsElectron-phonon ScatteringEnsemble SizeExcitonic EffectsGallium Nitride (Gan) MaterialsPhotoluminescencePhotoluminescence SpectroscopyRaman SpectraSemiconductor Nanostructures
We present photoluminescence (PL) studies of GaN and ZnO nanocrystallites and powders. Our studies show that in addition to the intrinsic photoluminescence characteristics, the photoluminescence properties of the porous media are also a strong function of conditions such as ensemble size and powder density, ultraviolet-laser excitation power, and vacuum state. PL redshifts up to 120 meV were observed for GaN and ZnO crystallites and were attributed to laser heating and heat trapping in the ensemble. The electron-phonon interaction model for GaN indicated ensemble temperature ∼550 K, which is consistent with the finding obtained via high-temperature PL and Raman experiments. The PL in the vacuum state exhibited a significant redshift, ∼80 meV relative to that in air, and the PL of a dense ZnO pellet was found to resemble that of the bulk more than does a loose powder. The PL analyses indicated an excitonic emission at room temperature for both GaN and ZnO crystallites with intensity saturation occurring for large ensembles at high laser power.
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Optical Processes in Semiconductors
J. I. Pánkové, D. A. Kiewit · Journal of The Electrochemical Society · 1972 · 4.6K citations
Mechanisms behind green photoluminescence in ZnO phosphor powders
K. Vanheusden, W. L. Warren, C. H. Seager et al. · Journal of Applied Physics · 1996 · 3.7K citations
Natural Sciences, Materials Engineering, Materials Science +17