Proposal of High Performance 1.55.MU.m Quantum Dot Heterostructure Laser Using InN

Abstract

This paper reports on a theoretical study and modeling of a 1.55µm quantum dot heterostructure laser using InN as a promising candidate for the first time. Details of design and theoretical analysis of probability distribution of the optical transition energy, threshold current density, modal gain, and differential quantum efficiency are presented considering a single layer of quantum dots. Dependence of threshold current density on the RMS value of quantum dot size fluctuations and the cavity length is studied. A low threshold current density of ∼51Acm-2 is achieved at room temperature for a cavity length of 640µm. An external differential efficiency of ∼65% and a modal gain of ∼12.5cm-1 are obtained for the proposed structure. The results indicate that the InN based quantum dot laser is a promising one for the optical communication system.