Ashraful G. Bhuiyan

InGaN Solar Cells: Present State of the Art and Important Challenges

Ashraful G. Bhuiyan, Sugita Kenichi, Akihiro Hashimoto et al. · IEEE Journal of Photovoltaics · 2012 · 244 citations

Wide-bandgap Semiconductor, Engineering, Energy Conversion +21

Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy

Ashraful G. Bhuiyan, Sugita Kenichi, Ken Kasashima et al. · Applied Physics Letters · 2003 · 96 citations

Anomalous temperature dependent thermal conductivity of two-dimensional silicon carbide

A. S. M. Jannatul Islam, Md. Sherajul Islam, Naim Ferdous et al. · Nanotechnology · 2019 · 65 citations

Anisotropic mechanical behavior of two dimensional silicon carbide: effect of temperature and vacancy defects

A. S. M. Jannatul Islam, Md. Sherajul Islam, Naim Ferdous et al. · Materials Research Express · 2019 · 48 citations

Engineering, Mechanical Stability, Mechanical Engineering +19

Metal-organic vapor-phase epitaxial growth of InGaN and InAlN for multi-junction tandem solar cells

Akio Yamamoto, Koshiro Sugita, Ashraful G. Bhuiyan et al. · Materials for Renewable and Sustainable Energy · 2013 · 27 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +15