IEEE Electron Device Letters · 2011 · 34 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsFerroelectric MaterialsMemory DevicesMetal-oxide-semiconductor Field-effect TransistorsOxide SemiconductorsSemiconductor Thin FilmsThin-film TransistorsFerroelectric Field-effect TransistorsFerroelectric PropertiesFerroelectric Thin FilmsGate Dielectric EngineeringOxide Thin-film TransistorsRead Disturb Management
A new ferroelectric memory array on a glass substrate has been developed using In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). Each memory cell is composed of two normal IGZO TFTs and a ferroelectric TFT (FeTFT). Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] is employed as the gate dielectric layer of the FeTFT. All the fabrication processes were performed below 200°C. The fabricated memory successfully demonstrated disturb-free write/readout operation. The current ratio between the “1” and “0” states is about 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> .
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