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Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments
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2000
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Materials EngineeringChimney Cvd ReactorElectrical EngineeringEngineeringApplied PhysicsCvd ProcessSemiconductor Device FabricationStructural CeramicHeat TransferReactor GeometryEpitaxial GrowthMolecular Beam EpitaxyFusion Reactor MaterialNuclear ReactorsCarbide
The epitaxial growth of SiC is investigated in a CVD process based on a vertical hot-wall, or chimney, reactor geometry. Carried out at increased temperatures (1650 to 1850 degreesC) and concentr ...