Alexsandre Ellison - Concepedia

Author

Alexsandre Ellison

Linköping University

Also Known As

Alexsandre Ellison

Publications

442

Citations

H-Index

Concepts

All Affiliations

Linköping University Norstel (Sweden)Okmetic (Finland)ABB (Switzerland)Kyoto University

About

Alexsandre Ellison is an author at Linköping University specializing in applied physics, engineering, and materials engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	13	386
2	Applied Physics	11	13	386
3	Electrical Engineering	8	8	270
4	Natural Sciences	1	1	11
5	Chemistry	1	1	11

Alexsandre Ellison

Publications

386

Citations

H-Index

Page 1

	Year	Citations
HTCVD Grown Semi-Insulating SiC Substrates Alexsandre Ellison, Björn Magnusson, Nguyên Tiên Són, Materials science forum Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductor DeviceEngineering	2003	63
SiC Crystal Growth by HTCVD Alexsandre Ellison, Björn Magnusson, Björn Sundqvist, Materials science forum Materials ScienceMaterials EngineeringElectrical EngineeringSic CrystalsEngineering	2004	62
Defects in High-Purity Semi-Insulating SiC Nguyên Tiên Són, Björn Magnusson, Z. Zolnai, Materials science forum Materials EngineeringEngineeringApplied PhysicsDefect FormationHigh-purity Semi-insulating Sic	2004	61
Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments Alexsandre Ellison, Jie Zhang, W. Magnusson, Materials science forum Materials EngineeringChimney Cvd ReactorElectrical EngineeringEngineeringApplied Physics	2000	37
Defects in Semi-Insulating SiC Substrates Nguyên Tiên Són, Björn Magnusson, Z. Zolnai, Materials science forum Materials EngineeringElectrical EngineeringPhysical Vapour TransportEngineeringPhysics	2003	33
Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes Q. Wahab, Alexsandre Ellison, C. Hallin, Materials science forum Electrical EngineeringSemiconductor DeviceEngineeringEpitaxial GrowthHigh Voltage Engineering	2000	26
High Voltage (>2.5kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall CVD and High-Temperature CVD Layers Tsunenobu Kimoto, Q. Wahab, Alexsandre Ellison, Materials science forum Electrical EngineeringEngineeringHigh Voltage EngineeringPower DeviceHigh-temperature Cvd Layers	1998	20
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence Spectroscopy Anne Henry, Alexsandre Ellison, Urban Forsberg, Materials science forum Materials ScienceMaterials EngineeringElectrical EngineeringSic WafersEngineering	2002	18
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the (0001) Basal Plane C. Hallin, Alexsandre Ellison, Ivan G. Ivanov, Materials science forum Materials EngineeringEngineeringPhysicsCvd GrowthSic Epitaxial Layers	1998	17
In Situ Etching of 4H-SiC in H<sub>2</sub> with Addition of HCl for Epitaxial CVD Growth Jie Zhang, Olof Kordina, Alexsandre Ellison, Materials science forum Materials EngineeringMaterials ScienceEngineeringEpitaxial Cvd GrowthSitu Etching	2002	15

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