IEEE Journal of Solid-State Circuits · 1981 · 219 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignDevice CharacterizationDevice ModelingDopingIntegrated Circuit DesignMos CapacitorsCapacitorsMatchingOxide Defect StatesPolysiliconScaling Effects In CmosSilicon CharacterizationSilicon Electrical PropertiesTemperature Dependence
The matching properties of MOS capacitors are modeled and compared with measured data. A weighted-capacitor array design approach is described. Voltage and temperature dependence of MOS capacitors are analyzed, modeled, and compared with measured data. It is shown that to a first-order heavily doped polysilicon accumulates and depletes similar to crystalline silicon.
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