Electronics Letters · 1994 · 15 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesIntegrated Circuit DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsCurrent DensityGaas Microwave Integrated CircuitsGaas Monolithic Microwave Integrated CircuitsHigh-frequency ElectronicsImpatt DiodesMicrowave DevicesRadio-frequency DevicesRadio-frequency Integrated Circuit Design
GaAs Read-type IMPATT diodes for operation at D-band frequencies have been designed and fabricated. The main design feature is low DC input voltage and high current density. The devices are encapsulated using the novel module technique on diamond heatsinks. RF output powers of 75 mW at 120 GHz and 8 mW at 144 GHz are realised. The highest oscillation frequency for CW operation is 150 GHz.
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M.E. Elta, H.R. Fetterman, W. Macropoulos et al. · IEEE Electron Device Letters · 1980 · 21 citations
GaAs read-type impatt diode for 130 GHz CW operation
Kai Chang, J. K. Kung, P.G. Asher et al. · Electronics Letters · 1981 · 10 citations