Electronics Letters · 1990 · 21 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesMicrowave OscillatorsMicrowave ResonatorsMicrowave Semiconductor DevicesNoise In Electronic DevicesNoise In Semiconductor DevicesDiode-based OscillatorsGaas OscillatorsGunn DiodesHigh-power OscillatorsImpatt DiodesMaximum Available PowerQuasi-optical OscillatorsSemiconductor Materials For Microwave Devices
W-band single-drift flat-profile impatt diodes were fabricated from GaAs MBE material and tested in a full-height waveguide resonant cavity with resonant cap. A quasi-optical parabolic Fabry–Perot resonator was used to determine the FM noise of the GaAs impatt oscillator. With a minimum noise measure of 20 dB at power levels around 20 mW, impatt diode oscillators can compete well with oscillators using Gunn devices. The (N/C)FM = − 82dBc measured at 100 kHz frequency off-carrier and datQex = 95 is comparable to the value obtained from Gunn devices. The maximum available output power of 270 mW, however, markedly exceeds that of Gunn oscillators.