Gunn Diode is a type of transferred electron device, belonging to the class of negative differential resistance semiconductor components, that generates microwave oscillations through the formation and transit of high-field domains in bulk n-type gallium arsenide or similar compound semiconductors under a DC bias.
292
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8.6K
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650
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201
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2017–2026
6
Variants
Gunn Diode
Publications
292
Noise in solid-state devices and lasers
A. van der Ziel · Proceedings of the IEEE · 1970 · 232 citations
1–5 of 292
Authors
650
- HE
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- GM
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1–5 of 650
Institutions
201
University of Aberdeen
Aberdeen, United Kingdom
13 h-index
34 publications
1K citations
University of Michigan
Ann Arbor, United States
12 h-index
22 publications
879 citations
University of Glasgow
Glasgow, United Kingdom
10 h-index
49 publications
1.9K citations
Cornell University
Ithaca, United States
8 h-index
14 publications
899 citations
Varian Medical Systems (United States)
Palo Alto, United States
8 h-index
21 publications
337 citations
Xidian University
Xi'an, China
7 h-index
34 publications
630 citations
Universidad de Salamanca
Salamanca, Spain
6 h-index
25 publications
926 citations
NEC (Japan)
Tokyo, Japan
6 h-index
12 publications
193 citations
1–8 of 201
Venues
- IEEE Transactions on Microwave Theory and Techniques
34 publications · 1.4K citations
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- IEEE Transactions on Electron Devices
33 publications · 856 citations
18
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- Electronics Letters
44 publications · 915 citations
18
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- Applied Physics Letters
19 publications · 744 citations
15
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- Journal of Applied Physics
16 publications · 483 citations
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