Super-low-k SiOCH film (k = 1.9) with extremely high water resistance and thermal stability formed by neutral-beam-enhanced CVD

Abstract

We developed a neutral-beam-enhanced method of chemical vapour deposition (NBECVD) to obtain a lower dielectric constant for the SiOCH interlayer dielectric film while maintaining a reasonable modulus. We achieved a higher deposition rate than that with the precursor of dimethyl-dimethoxy-silane (DMDMOS) we previously reported on by using Ar NBECVD with a precursor of dimethoxy-tetramethyl-disiloxine (DMOTMDS). This is because of the high absorption coefficient of DMOTMDS. Ar NBECVD with DMOTMDS also achieved a much lower dielectric constant than the conventional PECVD film, because this method avoids the precursor dissociation that causes low dielectric film with many linear Si–O structures. We obtained a k value of 1.9 for the super-low- k SiOCH film with an extremely water resistant, and very thermally stable and integration-possible modulus (>4 GPa) by controlling the bias power.