Diffusion and interaction studied nondestructively and in real-time with depth-resolved low energy ion spectroscopy

Abstract

An analysis procedure was developed that enables studying diffusion in ultrathin films by utilizing the depth-resolved information that is contained in the background of low energy ion scattering (LEIS) spectra. Using a high-sensitivity analyzer/detector combination allows for such a low ion dose that the ion-induced perturbation caused by this technique is negligible and not measurable with LEIS. The developed analysis procedure provides a unique opportunity to study diffusion processes in nanoscaled systems. It was applied to the Mo/Si system, a system that is relevant for extreme ultraviolet optics.