New OMVPE reactor for large area uniform deposition of InP and related alloys

Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD

Masahiro Akiyama, Yoshihiro Kawarada, Katsuzo Kaminishi · Japanese Journal of Applied Physics · 1984 · 363 citations

Engineering, Electrical Engineering, Materials Science +17

Low pressure metalorganic chemical vapor deposition of InP and related compounds

Manijeh Razeghi, M.A. Poisson, J.P. Larivain et al. · Journal of Electronic Materials · 1983 · 93 citations

Natural Sciences, Chemistry, Materials Science +6

Flow visualization studies for optimization of OMVPE reactor design

C.A. Wang, S. H. Groves, S. C. Palmateer et al. · Journal of Crystal Growth · 1986 · 91 citations

Engineering, Chemical Engineering, Visualization +14

Growth of multiple thin layer structures in the GaAs-AlAs system using a novel VPE reactor

Maarten Leys, C. van Opdorp, M. P. A. Viegers et al. · Journal of Crystal Growth · 1984 · 71 citations

Engineering, Materials Engineering, Materials Science +14

Vertical versus horizontal reactor: An optical study of the gas phase in a MOCVD reactor

Lorenz Stock, W. Richter · Journal of Crystal Growth · 1986 · 51 citations

Engineering, Chemical Engineering, Physics +9