IEEE Electron Device Letters · 1990 · 30 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsNoise In Electronic DevicesNoise In Semiconductor DevicesSemiconductor HeterostructuresSemiconductor PhysicsGainHigh-electron-mobility TransistorsHigh-frequency ElectronicsLow-noise AmplificationLow-noise DesignNoise FigureNoise Figure AnalysisNoise In High-frequency Semiconductor Devices
Low-noise planar doped pseudomorphic (PM) InGaAs high-electron-mobility transistors (HEMTs) with a gate length of 0.1 mu m for W-band operation are discussed. These devices feature a multiple-finger layout with air bridges interconnecting the sources to reduce gate resistance. The device exhibits a minimum noise figure of 2.5 dB with an associated gain of 4.7 dB at 92.5 GHz. This result demonstrates the feasibility of using PM InGaAs HEMTs for W-band low-noise receivers without the need for using lattice-matched InP HEMTs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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W-band low-noise InAlAs/InGaAs lattice-matched HEMTs
P.C. Chao, A.J. Tessmer, K.H.G. Duh et al. · IEEE Electron Device Letters · 1990 · 205 citations
A family of InGaAs/AlGaAs V-band monolithic HEMT LNAs