Applied Physics Letters · 2002 · 41 citations · 11 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySurface ChemistrySurface ScienceAtomic Force MicroscopyElectron Beam LithographyMask FabricationNanostructured SurfacesPolymer Thin FilmsSurface ModificationAtomic Force Microscopy Surface AnalysisLithographic Surface PatterningMaskingNanoscale Surface CharacterizationPolymethyl MethacrylateSiliconSilicon DioxideSurface Topography Mapping
Electron beam lithography was used to make nanometer trenches in thin polymethylmethacrylate (PMMA). After development, the wafers were dipped in an aqueous solution of the Creutz–Taube ion [(NH3)5Ru(pyrazine)Ru(NH3)5](o-toluenesulphonate)5 (CT5), and the PMMA was removed with acetone or dichloromethane. Atomic force microscopy and x-ray photoelectron spectroscopy were used to investigate the surface characteristics of wafers after dissolution of the PMMA and to confirm the binding of a monolayer of CT5 molecules on the wafer within the areas delimited by the PMMA trenches. This masking technique has so far been demonstrated to pattern 35 nm lines of a monolayer of CT5 molecules on silicon dioxide.
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Craig S. Lent, P. Douglas Tougaw, Wolfgang Porod et al. · Nanotechnology · 1993 · 1.8K citations
Realization of a Functional Cell for Quantum-Dot Cellular Automata
Alexei O. Orlov, I. Amlani, Gary H. Bernstein et al. · Science · 1997 · 642 citations
Engineering, Computer Engineering, Electrical Engineering +16