Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond

Jan Isberg, J. Hammersberg, Erik M. J. Johansson et al. · Science · 2002 · 1.3K citations

Natural Sciences, Materials Science, Physics +14

Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz

K. Ueda, Makoto Kasu, Y. Yamauchi et al. · IEEE Electron Device Letters · 2006 · 274 citations

Engineering, Electrical Engineering, Materials Science +17

Enhancement mode metal-semiconductor field effect transistors using homoepitaxial diamonds

Hiroshi Kawarada, Makoto Aoki, Masahiro Ito · Applied Physics Letters · 1994 · 178 citations

Engineering, Electrical Engineering, Materials Science +17

2 W/mm output power density at 1 GHz for diamond FETs

Makoto Kasu, K. Ueda, Haitao Ye et al. · Electronics Letters · 2005 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Diamond-based RF power transistors: Fundamentals and applications

Makoto Kasu, K. Ueda, Y. Yamauchi et al. · Diamond and Related Materials · 2007 · 116 citations

Engineering, Electrical Engineering, Materials Science +12