Yoshiharu Yamauchi

High-power characteristics of GaN/InGaN double heterojunction bipolar transistors

Toshiki Makimōto, Yoshiharu Yamauchi, Kazuhide Kumakura · Applied Physics Letters · 2004 · 57 citations

High-power Characteristics, Electrical Engineering, Electronic Devices +13

In Situ Optical Monitoring of the GaAs Growth Process in MOCVD

Toshiki Makimōto, Yoshiharu Yamauchi, Naoki Kobayashi et al. · Japanese Journal of Applied Physics · 1990 · 56 citations

Optical Materials, Different Optical Absorption, Engineering +18

Flow-rate modulation epitaxy of GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimōto, Yoshiharu Yamauchi et al. · Journal of Applied Physics · 1989 · 42 citations

Gate interfacial layer in hydrogen-terminated diamond field-effect transistors

Makoto Kasu, K. Ueda, Hiroyuki Kageshima et al. · Diamond and Related Materials · 2008 · 38 citations

Diamond-like Carbon, Electrical Engineering, Engineering +3

Investigation of the Decomposition Process of Ga Organometals in MOCVD by the Surface Photo-Absorption Method

Toshiki Makimōto, Yoshiharu Yamauchi, Naoki Kobayashi et al. · Japanese Journal of Applied Physics · 1990 · 35 citations

Optical Materials, Engineering, Inorganic Photochemistry +25