Applied Physics Letters · 1982 · 37 citations · 3 references
Natural SciencesMaterials SciencePhysicsPlasma PhysicsSurface ChemistrySurface ScienceAuger Electron SpectroscopyEtching ProcessesPlasma-surface InteractionsSurface KineticsSurface OxidationSurface PhysicsEtch MechanismsNative Oxide LayersNative Oxide RemovalPlasma EtchingPlasma-assisted OxidationPower DensitySurface ContaminationSurface Etching
The surface etching kinetics of hydrogen plasma on InP have been studied using Auger electron spectroscopy. It is found that the surface hydrocarbon contamination can be removed with a low power density (15 mW cm−3) of hydrogen plasma. At higher power phosphorus is preferentially removed by the hydrogen atoms in the form of hydrides, leaving the surface rich in In. The excess In is oxidized at high background pressure (∼10−6 Torr) by residual water vapor. However, at low base pressure (≲10−7 Torr) the native oxide (∼10 Å) can be etched away.
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Hydrogen plasma etching of GaAs oxide
R. P. H. Chang, S. Darack · Applied Physics Letters · 1981 · 62 citations