Impact of seed layer on material quality of epitaxial germanium on silicon deposited by low pressure chemical vapor deposition

High-quality Ge epilayers on Si with low threading-dislocation densities

Hsin-Chiao Luan, Desmond R. Lim, Kevin C. Lee et al. · Applied Physics Letters · 1999 · 677 citations

Engineering, Materials Engineering, Materials Science +16

Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Jean‐Michel Hartmann, Alexandra Abbadie, Anne‐Marie Papon et al. · Journal of Applied Physics · 2004 · 225 citations

Engineering, Materials Engineering, Materials Science +17

Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition

Mathieu Halbwax, D. Bouchier, Vy Yam et al. · Journal of Applied Physics · 2005 · 62 citations

Natural Sciences, Materials Science, Physics +17

Determination of the lattice contraction of boron-doped silicon

H. Holloway, S. L. McCarthy · Journal of Applied Physics · 1993 · 48 citations

Engineering, Materials Engineering, Materials Science +17

Strain compensation in Si1−<i>x</i>Ge<i>x</i> by heavy boron doping

Bernd Tillack, P. Zaumseil, G. Morgenstern et al. · Applied Physics Letters · 1995 · 40 citations

Natural Sciences, Materials Engineering, Materials Science +17