D. Bouchier - Concepedia

Author

D. Bouchier

Centre National de la Recherche Scientifique

Also Known As

Bouchier, D, Bouchier, D., Bouchier, Daniel, Connolly, J.P., D Bouchier, D. BOUCHIER, D. Bouchier, Daniel BOUCHIER, Daniel Bouchier, Mencaraglia, D.

177

Publications

2.6K

Citations

H-Index

Concepts

All Affiliations

Centre National de la Recherche Scientifique Université Paris-Sud Université Paris Cité Université Paris-Saclay Sorbonne Université

About

D. Bouchier is an author at Centre National de la Recherche Scientifique specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	69	2.1K
2	Applied Physics	26	66	2K
3	Chemical Engineering	5	5	169
4	Chemistry	5	5	182
5	Natural Sciences	2	2	89

D. Bouchier

Publications

2.2K

Citations

H-Index

Page 1

	Year	Citations
Vertically self-organized Ge/Si(001) quantum dots in multilayer structures V. Le Thanh, Vy Yam, P. Boucaud, Physical review. B, Condensed matter Materials ScienceLayer ThicknessIi-vi SemiconductorEpitaxial GrowthEngineering	1999	139
Band-edge and deep level photoluminescence of pseudomorphic Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloys P. Boucaud, Colin G. Francis, F. H. Julien, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	1994	100
Designing III-V multijunction solar cells on silicon J.P. Connolly, Denis Mencaraglia, Charles Renard, Progress in Photovoltaics Research and Applications SemiconductorsElectrical EngineeringEngineeringSolar Cell StructuresApplied Physics	2014	99
Intraband absorption in Ge/Si self-assembled quantum dots P. Boucaud, V. Le Thanh, S. Sauvage, Applied Physics Letters Materials SciencePhotoluminescenceEngineeringPhysicsNanomaterials	1999	79
Novel Heterostructured Ge Nanowires Based on Polytype Transformation Laetitia Vincent, G. Patriarche, Géraldine Hallais, Nano Letters Materials ScienceOne-dimensional MaterialPolytype TransformationGe NanowiresGe Nanowire	2014	71
Nucleation and growth of self-assembled Ge/Si(001) quantum dots V. Le Thanh, P. Boucaud, D. Débarre, Physical review. B, Condensed matter Materials ScienceEngineeringPhysicsNanotechnologyCrystal Growth Technology	1998	66
Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition O. Burat, D. Bouchier, Valérie Stambouli, Journal of Applied Physics EngineeringSurface Boron AtomsVacuum DeviceChemistryBorophene	1990	63
Kinetics of Ge growth at low temperature on Si(001) by ultrahigh vacuum chemical vapor deposition Mathieu Halbwax, D. Bouchier, Vy Yam, Journal of Applied Physics Relaxation ProcessEngineeringVacuum DeviceSilicon On InsulatorReal Time	2005	61
Midinfrared photoconductivity of Ge/Si self-assembled quantum dots Noam Rappaport, E. Finkman, T. Brunhes, Applied Physics Letters Quantum PhotonicsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors	2000	59
Two-dimensional photonic crystals with Ge/Si self-assembled islands S. David, M. El Kurdi, P. Boucaud, Applied Physics Letters Optical MaterialsGe/si Self-assembled IslandsEngineeringOptoelectronic DevicesPhotonic Crystal Microcavities	2003	58

Page 1