D. Bouchier

Vertically self-organized Ge/Si(001) quantum dots in multilayer structures

V. Le Thanh, Vy Yam, P. Boucaud et al. · Physical review. B, Condensed matter · 1999 · 139 citations

Materials Science, Layer Thickness, Ii-vi Semiconductor +14

Band-edge and deep level photoluminescence of pseudomorphic Si1−<i>x</i>−<i>y</i>Ge<i>x</i>C<i>y</i> alloys

P. Boucaud, Colin G. Francis, F. H. Julien et al. · Applied Physics Letters · 1994 · 100 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Designing III-V multijunction solar cells on silicon

J.P. Connolly, Denis Mencaraglia, Charles Renard et al. · Progress in Photovoltaics Research and Applications · 2014 · 99 citations · Full text

Semiconductors, Electrical Engineering, Engineering +12

Intraband absorption in Ge/Si self-assembled quantum dots

P. Boucaud, V. Le Thanh, S. Sauvage et al. · Applied Physics Letters · 1999 · 79 citations

Materials Science, Photoluminescence, Engineering +10

Novel Heterostructured Ge Nanowires Based on Polytype Transformation

Laetitia Vincent, G. Patriarche, Géraldine Hallais et al. · Nano Letters · 2014 · 71 citations · Full text

Materials Science, One-dimensional Material, Polytype Transformation +12