Intrinsic defects in silicon

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 541 citations

Engineering, Materials Engineering, Materials Science +17

Recombination enhanced defect reactions

Lionel C. Kimerling · Solid-State Electronics · 1978 · 428 citations

Medicine, Materials Science, Recombination +4

First-principles calculations of self-diffusion constants in silicon

Peter E. Blöchl, Enrico Smargiassi, Roberto Car et al. · Physical Review Letters · 1993 · 275 citations

Natural Sciences, Materials Science, Physics +17

Radiation Effects in Semiconductors

P. J. Dean · Physics Bulletin · 1972 · 229 citations

Engineering, Electrical Engineering, Materials Science +12

International Conference on the Physics of Semiconductors

Journal of the Optical Society of America · 1961 · 222 citations

Engineering, Materials Science, Physics +17