EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsBipolar Junction TransistorsDevice CharacterizationIntegrated Circuit DesignIntegrated Circuit DevicesSemiconductor Device MaterialsSemiconductor PhysicsCurrent GainGain EnhancementLeakageSilicon Carbide (Sic) MaterialsSilicon Carbide Power DevicesSwitching BehaviorSwitching DevicesSwitching Performance
Bipolar junction transistors (BJT) and integrated Darlington pairs have been developed in 4H-SiC. The 3 mm x 3 mm BJTs show an on-state current of 20 A at a forward drop of 1.2 V at room temperature. The smaller 2 mm x 2 mm devices were tested up to 325 /spl deg/C. The on-resistance increases and the current gain reduces with increasing temperature. The reverse leakage current was measured to be less than 40 muA at 1000 V and 325 /spl deg/C. Inductive switching at 1000 V, 5 A shows extremely fast turn-on and turn-off behavior.
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Large area, 1.3 kV, 17 A, bipolar junction transistors in 4H-SiC
Anant Agarwal, Sei‐Hyung Ryu, Jim Richmond et al. · 2004 · 22 citations