Concepedia

Strain relaxation in Si−xGex layers on Si(001)

M. A. Capano, L. Hart, D. K. Bowen, D. Gordon-Smith, C.R. Thomas, C. J. Gibbings, M. A. G. Halliwell, L. W. Hobbs

Journal of Crystal Growth · 1992 · 15 citations · 8 references

DOI

Concepts

References

8

Silicon molecular beam epitaxy

Yusuke Ota · Thin Solid Films · 1983 · 300 citations

, , +12

Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers

K. L. Kavanagh, M. A. Capano, L. W. Hobbs et al. · Journal of Applied Physics · 1988 · 207 citations

, , +17

Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

I. J. Fritz · Applied Physics Letters · 1987 · 168 citations

, , +17

Structure and recombination in InGaAs/GaAs heterostructures

Eugene A. Fitzgerald, D. G. Ast, P. D. Kirchner et al. · Journal of Applied Physics · 1988 · 167 citations

, , +17

Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy

P. L. Gourley, I. J. Fritz, L. R. Dawson · Applied Physics Letters · 1988 · 163 citations

, , +17