Concepedia
Journal of Crystal Growth · 2007 · 10 citations · 2 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsSurface ScienceDopingOptical Properties Of SemiconductorsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsSemiconductor Doping
2
Atomic-scale nature of the (3×3)-ordered GaAs(001):N surface prepared by plasma-assisted molecular-beam epitaxy
Shangjr Gwo, Hiroshi Tokumoto, Shiro Miwa · Applied Physics Letters · 1997 · 43 citations
Engineering, Materials Engineering, Materials Science +17
Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique
Takashi Kita, Osamu Wada · Physical Review B · 2006 · 35 citations · Full text
Natural Sciences, Materials Science, Physics +17