Tomoya Inoue

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

Yoshitaka Okada, Takayuki Morioka, Katsuhisa Yoshida et al. · Journal of Applied Physics · 2011 · 231 citations

Wide-bandgap Semiconductor, Quantum Science, Electrical Engineering +14

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

Muhammad Usman, Tomoya Inoue, Yukihiro Harda et al. · Physical Review B · 2011 · 48 citations · Full text

Optical Materials, Engineering, Isotropic Polarization Response +18

Electron tomography of embedded semiconductor quantum dot

Tomoya Inoue, Takashi Kita, Osamu Wada et al. · Applied Physics Letters · 2008 · 46 citations · Full text

Embedded Single Qd, Indium Distribution, Quantum Tomography +12

Effects of absorption coefficients and intermediate-band filling in InAs/GaAs quantum dot solar cells

Weiguo Hu, Tomoya Inoue, Osamu Kojima et al. · Applied Physics Letters · 2010 · 45 citations · Full text

High Conversion Efficiency, Engineering, Optoelectronic Devices +17

Multidirectional Observation of Photoluminescence Polarization Anisotropy in Closely Stacked InAs/GaAs Quantum Dots

Yuichiro Ikeuchi, Tomoya Inoue, Masaki Asada et al. · Applied Physics Express · 2011 · 40 citations

Photoluminescence, Engineering, Physics +12