Electron tomography of embedded semiconductor quantum dot

Abstract

We performed an electron tomography for a single InAs quantum dot (QD) embedded in GaAs. A comprehensive three-dimensional image of indium distribution has been reconstructed by using a high-angle annular dark-field scanning transmission electron microscope. This was achieved by using a special nanopillar specimen prepared by a focused ion beam technique. The real structure of the embedded single QD has been found to have a complicated anisotropic structure reflecting the QD structure before being capped.