Bound exciton states of isoelectronic centers in GaAs:N grown by an atomically controlled doping technique

Abstract

We have studied bound exciton states of isoelectronic centers of nitrogen-doped $\mathrm{GaAs}$ by photoluminescence (PL) spectroscopy. The nitrogen doping has been performed in an atomically controlled way using the $(3\ifmmode\times\else\texttimes\fi{}3)$ nitrogen stable surface on $\mathrm{GaAs}(001)$, which has succeeded in forming a series of distinct, strong, narrow bandwidth PL lines. The PL lines have been attributed to recombinations of excitons bound to nitrogen pairs ordered along $[110]$. Magneto PL demonstrates the Zeeman-level diagrams of the triplet state influenced by the defect anisotropy. The PL features of $\mathrm{GaAs}:\mathrm{N}$ have been compared with the results for ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}:\mathrm{N}$