SiC boule growth by sublimation vapor transport

Investigation of growth processes of ingots of silicon carbide single crystals

Yu. M. Tairov, V. F. Tsvetkov · Journal of Crystal Growth · 1978 · 570 citations

Natural Sciences, Materials Engineering, Materials Science +14

Single crystal growth of SiC substrate material for blue light emitting diodes

G. Ziegler, P. Lanig, D. Theis et al. · IEEE Transactions on Electron Devices · 1983 · 198 citations

Engineering, Materials Engineering, Materials Science +17

Silicon carbide—A high temperature semiconductor

D. M. Warschauer · Journal of Physics and Chemistry of Solids · 1961 · 167 citations

Engineering, Materials Engineering, Materials Science +14

Figure of merit for semiconductors for high-speed switches

Robert W. Keyes · Proceedings of the IEEE · 1972 · 140 citations

Engineering, Electrical Engineering, Materials Science +14

Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers

J. A. Powell, David Larkin, L. G. Matus et al. · Applied Physics Letters · 1990 · 125 citations

Natural Sciences, Materials Engineering, Materials Science +17