Japanese Journal of Applied Physics · 1994 · 43 citations · 2 references
Quantitative EvaluationElectrical EngineeringPlasma ElectronicsEngineeringGate Oxide DamageApplied PhysicsPlasma-induced DamageTime-dependent Dielectric BreakdownSingle Event EffectsResidual Q BdGas Discharge PlasmaMicroelectronicsAntenna CapacitorPlasma ProcessingPlasma ApplicationElectrical Insulation
Plasma-induced damage of gate oxides is evaluated from the difference between the intrinsic charge-to-breakdown ( Q BD ) and the residual Q BD . This difference, Δ Q BD , corresponds to the plasma-induced damage to the oxide and to the accumulation of conduction current from the plasma into the oxide. It is shown experimentally that the plasma-induced damage Δ Q BD increases in proportion to the antenna ratio (exposed antenna area/gate area). The Δ Q BD of the antenna capacitor depends not on the device structures such as the gate oxide thickness, but on the plasma process conditions.
2