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Multivalley transport and the integer quantum Hall effect in a PbTe quantum well
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Citations
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References
2005
Year
EngineeringMagnetic ResonanceLongitudinal ResistancesTopological Quantum StatePbte QuantumMultivalley TransportSemiconductorsMagnetismQuantum ComputingSuperconductivityQuantum MaterialsOblique Valley SubbandHall EffectQuantum SciencePhysicsQuantum DeviceCondensed Matter TheorySolid-state PhysicQuantum MagnetismNatural SciencesApplied PhysicsCondensed Matter PhysicsQuantum Devices
We report magnetotransport measurements performed on a 10 nm $n$-type $\mathrm{PbTe}∕{\mathrm{Pb}}_{0.9}{\mathrm{Eu}}_{0.1}\mathrm{Te}$ quantum well grown on a ${\mathrm{BaF}}_{2}$ substrate. In contrast to previous work, both the Hall and longitudinal resistances show a clearly defined signature of the integer quantum Hall effect with no sign of parallel conduction. Due to the large carrier density, the occupation of two longitudinal subbands and one oblique valley subband leads to an unusual sequence of filling factors.
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