A. Y. Ueta - Concepedia

Author

A. Y. Ueta

Instituto Nacional de Pesquisas Espaciais

Also Known As

A Y. Ueta, A. Y. UETA, A. Y. Ueta, A.Y Ueta, A.Y. Ueta

Publications

511

Citations

H-Index

Concepts

All Affiliations

Instituto Nacional de Pesquisas Espaciais Johannes Kepler University of Linz Universidade de São Paulo Universidade Federal de Viçosa Laboratoire National des Champs Magnétiques Intenses

About

A. Y. Ueta is an author at Instituto Nacional de Pesquisas Espaciais specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	381
2	Applied Physics	14	17	407
3	Natural Sciences	3	3	69
4	Chemistry	1	1	15
5	Electrical Engineering	1	1	18

A. Y. Ueta

Publications

418

Citations

H-Index

Page 1

	Year	Citations
Spiral growth and threading dislocations for molecular beam epitaxy of PbTe on BaF2 (111) studied by scanning tunneling microscopy G. Springholz, A. Y. Ueta, N. Frank, Applied Physics Letters Pbte GrowthEngineeringSemiconductor NanostructuresSemiconductorsLayer Thickness	1996	65
X-ray investigation of nanostructured stain-etched porous silicon P.G. Abramof, A.F. Beloto, A. Y. Ueta, Journal of Applied Physics Materials ScienceEngineeringNanoporous MaterialPhysicsNanotechnology	2006	44
Molecular beam epitaxial growth of high quality Pb1−xSnxTe layers with 0⩽x⩽1 P. H. O. Rappl, H. Closs, Sukarno Olavo Ferreira, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologyApplied Physics	1998	29
Band-edge polarized optical absorption in europium chalcogenides A. B. Henriques, A. Wierts, Mauricio Manfrini, Physical Review B Optical MaterialsEngineeringPhysicsOptical PropertiesSpectroscopy	2005	29
Doping studies for molecular beam epitaxy of PbTe and Pb1 − xEuxTe A. Y. Ueta, G. Springholz, F. Schinagl, Thin Solid Films Materials ScienceEngineeringCrystalline DefectsPhysicsApplied Physics	1997	27
Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors C. Boschetti, I. N. Bandeira, H. Closs, Infrared Physics & Technology PhysicsApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor	2001	26
Multivalley transport and the integer quantum Hall effect in a PbTe quantum well V. A. Chitta, W. Desrat, D. K. Maude, Physical Review B EngineeringMagnetic ResonanceLongitudinal ResistancesTopological Quantum StatePbte Quantum	2005	25
AFM characterization of PbTe quantum dots grown by molecular beam epitaxy under Volmer–Weber mode Sukarno Olavo Ferreira, Bernardo R. A. Neves, R. Magalhães‐Paniago, Journal of Crystal Growth Materials ScienceEngineeringPhysicsApplied PhysicsQuantum Materials	2001	23
Characterization of SnTe films grown by molecular beam epitaxy U. A. Mengui, E. Abramof, P. H. O. Rappl, Brazilian Journal of Physics Materials ScienceMaterials EngineeringLayer ThicknessEpitaxial GrowthEngineering	2006	18
Growth of narrow gap epilayers and p-n junctions on silicon for infrared detectors arrays C. Boschetti, P. H. O. Rappl, A. Y. Ueta, Infrared Physics Electrical EngineeringNarrow Gap EpilayersEngineeringPhysicsApplied Physics	1993	18

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