Applied Physics Letters · 1994 · 153 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor SurfacesSilicon MaterialsSurface OxidationThin Film OxidationCrystalline SiliconNanocrystalsOxidationPorous SiliconSilicon DioxideSilicon NanocrystalsSilicon OxidationSurface Area
We have analyzed red and blue luminescence from porous silicon as a function of oxidation parameters and feature dimension determined with an atomic force microscope. We have found correlation between blue luminescence intensity and the increase in feature size caused by oxidation. We have further shown that blue luminescence, is identical, with respect to spectrum and fast decay, to that of high microelectronic quality SiO2 grown on crystalline silicon using dry oxygen plus an organic chlorine compound. Thus, we conclude that blue luminescence originates from SiO2 film rather than from the silicon nanocrystals in the porous material. Intensity enhancement, as compared to SiO2 on crystalline wafers, comes from the gigantic surface area of porous silicon.
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Identification of radiative transitions in highly porous silicon
P. D. J. Calcott, K. J. Nash, Leigh Canham et al. · Journal of Physics Condensed Matter · 1993 · 404 citations
Self-limiting oxidation for fabricating sub-5 nm silicon nanowires
H. I. Liu, D. K. Biegelsen, F. A. Ponce et al. · Applied Physics Letters · 1994 · 287 citations