Identification of radiative transitions in highly porous silicon

Abstract

The authors report time-resolved photoluminescence spectroscopy of highly porous silicon. Their results show that the luminescence is due to localized quantum-confined excitons in undulating crystalline silicon wires. The resonantly excited photoluminescence spectrum exhibits satellite structure due to momentum-conserving phonons of crystalline silicon. This provides a clear signature of the crystalline-silicon electronic band structure. The spin states of the localized exciton are split by the electron-hole exchange interaction. This splitting is manifested both in the strong dependence of the luminescence lifetime on temperature, and as an energy gap in the resonantly excited photoluminescence spectrum. The experimental splitting is in good agreement with the value calculated for a localized exciton in crystalline silicon.