Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

Dynamical theory of diffraction applicable to crystals with any kind of small distortion

Shun Takagi · Acta Crystallographica · 1962 · 744 citations · Full text

Crystal Structure, Engineering, Crystal Growth Technology +17

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.-J. Wang et al. · Applied Physics Letters · 1988 · 180 citations

Semiconductors, Materials Science, Electrical Engineering +10

X-ray interference in ultrathin epitaxial layers: A versatile method for the structural analysis of single quantum wells and heterointerfaces

L. Tapfer, K. Ploog · Physical review. B, Condensed matter · 1989 · 157 citations

Ultrathin Epitaxial Layers, Engineering, Versatile Method +16

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

S. P. Watkins, G. Haacke · Applied Physics Letters · 1991 · 38 citations

Engineering, P-type Gaas Epilayers, Arsine Versus Tertiarybutylarsine +16

C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs

S. Leu, F. Höhnsdorf, W. Stolz et al. · Journal of Crystal Growth · 1998 · 35 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +7