Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

References

Page 1

	Year	Citations
Dynamical theory of diffraction applicable to crystals with any kind of small distortion Shun Takagi Acta Crystallographica Crystal StructureEngineeringCrystal Growth TechnologyElectron DiffractionNew Development	1962	744
Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy T. F. Kuech, M. A. Tischler, P.-J. Wang, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringSolid SolubilityEngineering	1988	180
X-ray interference in ultrathin epitaxial layers: A versatile method for the structural analysis of single quantum wells and heterointerfaces L. Tapfer, K. Ploog Physical review. B, Condensed matter Ultrathin Epitaxial LayersEngineeringVersatile MethodChemical CompositionSingle Quantum Wells	1989	157
Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine S. P. Watkins, G. Haacke Applied Physics Letters EngineeringP-type Gaas EpilayersArsine Versus TertiarybutylarsineChemistryCarbon Acceptor Incorporation	1991	38
C- and O-incorporation in (AlGa)As epitaxial layers grown by MOVPE using TBAs S. Leu, F. Höhnsdorf, W. Stolz, Journal of Crystal Growth Materials EngineeringMaterials ScienceIi-vi SemiconductorEngineeringSurface Science	1998	35
In situ investigation of GaAs (001) intrinsic carbon p-doping in metal-organic vapour phase epitaxy Markus Pristovsek, Bing Han, J.‐T. Zettler, Journal of Crystal Growth Situ InvestigationElectrical EngineeringEngineeringApplied PhysicsSemiconductor Material	2000	22
High C-doping of MOVPE grown thin AlxGa1−xAs layers for AlGaAs/GaAs interband tunneling devices Frank Dimroth, U. Schubert, F. Schienle, Journal of Electronic Materials Materials ScienceHigh C-dopingElectrical EngineeringWide-bandgap SemiconductorEngineering	2000	19
Luminescence properties of heavily carbon doped GaAs In Kim, Byung-Doo Choe, Weon Guk Jeong, Journal of Applied Physics SemiconductorsIi-vi SemiconductorElectrical EngineeringLuminescence PropertiesEngineering	1996	19
Carbon doping for the GaAs base layer of Heterojunction Bipolar Transistors in a production scale MOVPE reactor Frank Brunner, T. Bergunde, E. Richter, Journal of Crystal Growth Electrical EngineeringEngineeringGaas Base LayerApplied PhysicsHeterojunction Bipolar Transistors	2000	18
Characterization of heavily carbon-doped GaAs with a hole concentration of the order of 1021 cm−3 grown by metalorganic molecular beam epitaxy and its application to InGaP/GaAs heterojunction bipolar transistors Jun‐ichi Shirakashi, Toshiaki Azuma, Fumihiko Fukuchi, Journal of Crystal Growth SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	1995	17

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