Optical absorption near the fundamental absorption edge in GaSb

Carlo Ghezzi, R. Magnanini, A. Parisini, +4

Physical review. B, Condensed matter

Fundamental AbsorptionEngineeringPhotoluminescencePhysicsOptical Properties +12

Optical functions of bulk and epitaxial GaSb from 0.0025 to 6 eV

M. Patrini, G. Guizzetti, Mattéo Galli, +4

Solid State Communications

PhotonicsOptical MaterialsEngineeringPhysicsOptical Properties +8

Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

A. Bosacchi, S. Franchi, P. Allegri, +6

Journal of Crystal Growth

Materials ScienceUndoped GasbPhotoluminescenceEngineeringApplied Physics +4

Photoluminescence study of heavy doping effects in Te-doped GaSb

A. Bignazzi, A. Bosacchi, R. Magnanini

Journal of Applied Physics

Ii-vi SemiconductorPhotoluminescenceEngineeringPhysicsTe-doped Gasb +11

Controlled intrinsic carbon doping in MOVPE-grown GaAs layers by using TMGa and TBAs

Massimo Longo, R. Magnanini, A. Parisini, +4

Journal of Crystal Growth

Materials ScienceIi-vi SemiconductorElectrical EngineeringMovpe-grown Gaas LayersEngineering +5

Composition control of GaSbAs alloys

A. Bosacchi, S. Franchi, P. Allegri, +6

Journal of Crystal Growth

Materials ScienceMaterials EngineeringEngineeringMetallurgical SystemCorrosion +6

Electron mobility and physical magnetoresistance in n-type GaSb layers grown by molecular beam epitaxy

A. Baraldi, F. Colonna, Carlo Ghezzi, +5

Semiconductor Science and Technology

Wide-bandgap SemiconductorEngineeringMagnetoresistanceSemiconductor DeviceMagnetism +17

Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization

A. Baraldi, Carlo Ghezzi, R. Magnanini, +6

Materials Science and Engineering B

PhotoluminescenceEngineeringOptical PropertiesApplied PhysicsPhotoluminescence Characterization +4

Determination of lattice parameters in the epitaxial system by high resolution X-ray diffraction

C. Bocchi, A. Bosacchi, C. Ferrari, +4

Journal of Crystal Growth

X-ray CrystallographyMaterials ScienceEngineeringEpitaxial SystemX-ray Diffraction +7

Interband optical properties of molecular-beam epitaxially grown GaAs1−xSbx on GaAs substrates

R. Ferrini, M. Geddo, G. Guizzetti, +6

Journal of Applied Physics

Optical MaterialsEngineeringOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +17