Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy - Concepedia

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Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy

30

Citations

8

References

1995

Year

A. Bosacchi, S. Franchi, P. Allegri, V. Avanzini, A. Baraldi, Carlo Ghezzi, R. Magnanini, A. Parisini, Luciano Tarricone

Journal of Crystal Growth

Materials ScienceUndoped GasbPhotoluminescenceEngineeringApplied PhysicsMolecular Beam EpitaxyPhotoluminescence PropertiesLuminescence PropertyOptoelectronics

References

	Year	Citations

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