A. Bosacchi

Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots

L. Brusaferri, S. Sanguinetti, E. Grilli et al. · Applied Physics Letters · 1996 · 200 citations

Optical Materials, Engineering, Temperature Dependence +20

Strain relaxation in graded composition InxGa1−xAs/GaAs buffer layers

Filippo Romanato, E. Napolitani, A. Carnera et al. · Journal of Applied Physics · 1999 · 98 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +15

Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

M. Colocci, A. Vinattieri, L. Lippi et al. · Applied Physics Letters · 1999 · 73 citations

Materials Science, Quantum Science, Ii-vi Semiconductor +14

self-assembled quantum dots grown by ALMBE and MBE

A. Bosacchi, P. Frigeri, Stefano Franchi et al. · Journal of Crystal Growth · 1997 · 72 citations

Materials Science, Engineering, Bottom-up Synthesis +8

Optical properties of a ‘quasi-disordered’ semiconductor: ZnIn2S4

A. Bosacchi, Bruno Bosacchi, Stefano Franchi · Solid State Communications · 1973 · 72 citations

Semiconductors, Ii-vi Semiconductor, Optical Materials +8