Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy

On the stability of surfaces of stressed solids

David J. Srolovitz · Acta Metallurgica · 1989 · 1K citations · Full text

Engineering, Mechanics, Stressed Solids +7

Growth by molecular beam epitaxy and characterization of InAs/GaAs strained-layer superlattices

Leon J. Goldstein, Frank Glas, J. Y. Marzin et al. · Applied Physics Letters · 1985 · 887 citations

Materials Science, Ii-vi Semiconductor, Inas/gaas Superlattices +11

Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)

M. D. Pashley · Physical review. B, Condensed matter · 1989 · 789 citations

Engineering, Electron Diffraction, Principal Reconstructions +17

Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained In<i>x</i>Ga1−<i>x</i>As on GaAs(100)

Supratik Guha, A. Madhukar, K. C. Rajkumar · Applied Physics Letters · 1990 · 660 citations

Semiconductors, Engineering, Crystalline Defects +12

Effect of strain on surface morphology in highly strained InGaAs films

C. W. Snyder, B. G. Orr, David A. Kessler et al. · Physical Review Letters · 1991 · 497 citations

Engineering, Crystal Growth Technology, Mechanical Engineering +17