S. Saläun

Relationship between self-organization and size of InAs islands on InP(001) grown by gas-source molecular beam epitaxy

Anne Ponchet, Alain Le Corre, H. L’Haridon et al. · Applied Physics Letters · 1995 · 193 citations

Semiconductors, Materials Science, Island Size +14

Strain in InAs islands grown on InP(001) analyzed by Raman spectroscopy

J. Groenen, A. Mlayah, R. Carles et al. · Applied Physics Letters · 1996 · 60 citations

Engineering, Vibrational Modes, Spectroscopic Property +17

Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP(001) by gas source molecular beam epitaxy

Anne Ponchet, Alain Le Corre, A. Godefroy et al. · Journal of Crystal Growth · 1995 · 55 citations

Materials Science, Materials Engineering, Engineering +9

1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer

A. Godefroy, Alain Le Corre, Fabrice Clérot et al. · IEEE Photonics Technology Letters · 1995 · 34 citations

Photonics, Optical Materials, Engineering +11

Evaluation of power rating of core network equipment in practical deployments

Ward Van Heddeghem, Filip Idzikowski, Esther Le Rouzic et al. · 2012 · 29 citations

Power Engineering, Engineering, Energy Efficiency +19