Contact characterizations of ZrN thin films obtained by reactive sputtering

Extraction of Schottky diode parameters from forward current-voltage characteristics

S. K. Cheung, N.W. Cheung · Applied Physics Letters · 1986 · 2.7K citations

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Unified defect model and beyond

W. E. Spicer, I. Lindau, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1980 · 646 citations

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Physics and Chemistry of III—V Compound Semiconductor Interfaces

H. Gerischer · Electrochimica Acta · 1986 · 182 citations

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Depletion Capacitance and Diffusion Potential of Gallium Phosphide Schottky-Barrier Diodes

A. Cowley · Journal of Applied Physics · 1966 · 180 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

GaAs metallization: Some problems and trends

J. M. Woodall, J. L. Freeouf · Journal of Vacuum Science and Technology · 1981 · 141 citations

Engineering, Electrical Engineering, Materials Science +17