Journal of Applied Physics · 1973 · 10 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsAvalanche ProcessesDevice ReliabilityOptoelectronic DevicesOxide SemiconductorsPhotodetectorsSemiconductor DetectorsAvalanche BreakdownAvalanche GainAvalanche Photodiode DetectorsAvalanche Photodiodes
A large active-area avalanche photodiode is described. The use of the ``reach through shortly before breakdown'' concept for achieving high stable electric fields in conjunction with a metal-oxide-semiconductor structure allows stable device operation for active areas up to 5 cm2.
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A Proposed High-Frequency, Negative-Resistance Diode
W. T. Read · Bell System Technical Journal · 1958 · 556 citations
Avalanche Breakdown in Silicon
K. G. McKay · Physical Review · 1954 · 478 citations