Concepedia

Electrical characteristics of low temperature-Al0.3Ga0.7As

Ashish Verma, Jay K. Tu, J. S. Smith, Hiroshi Fujioka, Eicke R. Weber

Journal of Electronic Materials · 1993 · 19 citations · 8 references

Concepts

EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsElectrical CharacterizationElectrical ConductivityElectrical Properties Of CeramicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsLow-temperature SuperconductorsTemperature Dependence Of Electrical PropertiesTemperature-dependent Electrical Measurements

References

8

Current Injection in Solids

A. M. Stoneham · Physics Bulletin · 1970 · 2.6K citations

Natural Sciences, Electrical Engineering, Materials Science +17

New MBE buffer used to eliminate backgating in GaAs MESFETs

F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations

Engineering, Electrical Engineering, Materials Science +13

Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

M. Kamińska, Z. Liliental‐Weber, E. R. Weber et al. · Applied Physics Letters · 1989 · 415 citations

Natural Sciences, Materials Science, Physics +17

The Physics of Semiconductors

E. Anastassakis, John D. Joannopoulos · 1990 · 334 citations

Engineering, Materials Science, Physics +10

Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE

L.‐W. Yin, You Mi Hwang, J.H. Lee et al. · IEEE Electron Device Letters · 1990 · 132 citations

Engineering, Electrical Engineering, Materials Engineering +16